Piezoelectric device using zinc oxide thin film

Abstract

PURPOSE: To attain a high resistance by providing a constant elastic metallic plate, a zinc oxide thin film formed on one major plane of the constant elastic metallic plate, a bismuth oxide layer formed on the zinc oxide thin film and an electrode formed on the bismuth oxide layer. CONSTITUTION: An element main body 10 has a rectangular diaphramg 12 made of a constant elastic metallic plate such as an elinver. A rectangular zinc oxide thin film 18 is formed on one major plane of the diaphragm 12 and the bismuth oxide layer 20 is formed continuously on the surface of the film 18. Thus, the zinc oxide thin film 18 is covered by the bismuth oxide layer 20 and the diffusion of the electrode metal into the zinc oxide thin film 18 or the loss of oxygen from the zinc oxide thin film 18 by the electrode metal is prevented because of high temperature or high concentration oxygen at sealing. Thus, the resistance is increased. COPYRIGHT: (C)1988,JPO&Japio

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